Short answers, pulled from the story.
John Bardeen, Walter Brattain, and William Shockley invented the first working transistor, a point-contact transistor, at Bell Labs in Murray Hill, New Jersey, between the 17th of November and the 23rd of December, 1947. All three shared the 1956 Nobel Prize in Physics for their researches on semiconductors and their discovery of the transistor effect.
Shockley, Bardeen, and Brattain jointly received the 1956 Nobel Prize in Physics for their researches on semiconductors and their discovery of the transistor effect.
The MOSFET, or metal-oxide-semiconductor field-effect transistor, was demonstrated at Bell Labs in 1960 by Mohamed Atalla and Dawon Kahng. It accounts for 99.9% of all transistors in the world today and is the basic building block of modern digital electronics, enabling integrated circuits with more than 10,000 transistors and, in advanced microprocessors, as many as 92 billion on a single die.
More than 13 sextillion MOSFETs had been manufactured by 2018, making them the most numerous artificial objects in human history.
The Regency TR-1, released in October 1954, was the first production-model pocket transistor radio. It was built as a joint venture between the Regency Division of Industrial Development Engineering Associates and Texas Instruments of Dallas, Texas, and manufactured in Indianapolis, Indiana.
Physicist Julius Edgar Lilienfeld filed a patent for a field-effect transistor in Canada in 1925 and in the United States in 1926 and 1928, intending it as a solid-state replacement for the vacuum tube triode. He did not publish research or demonstrate a working prototype, and the semiconductor materials his design required were not available until decades later.