Short answers, pulled from the story.
Physicist Julius Edgar Lilienfeld filed a patent in Canada for a field-effect transistor on the 1st of March 1925. He subsequently filed identical patents in the United States during 1926 and 1928.
John Bardeen and Walter Brattain conducted experiments from November 17th to the 23rd of December 1947 that led to the invention of the first point-contact transistor. William Shockley later joined them to expand knowledge of semiconductors before they received the 1956 Nobel Prize in Physics.
Chemists Gordon Teal and Morgan Sparks successfully produced a working bipolar NPN junction amplifying germanium transistor on the 12th of April 1950. Bell announced this new sandwich transistor in a press release on the 4th of July 1951.
The Regency TR-1 became the first production-model pocket transistor radio released in October 1954. It contained four transistors and one germanium diode with industrial design outsourced to Painter, Teague and Petertil in Chicago.
Mohamed Atalla and Dawon Kahng proposed a silicon MOS transistor in 1959. Their Bell Labs team successfully demonstrated a working MOS device in 1960 with fabrication by E.E. LaBate and E.I. Povilonis.